Target application based design approach for RF MEMS switches using artificial neural networks

LN Thalluri, S Bommu, SM Rao, KS Rao… - … on Electrical and …, 2022 - Springer
LN Thalluri, S Bommu, SM Rao, KS Rao, K Guha, SS Kiran
Transactions on Electrical and Electronic Materials, 2022Springer
In this paper, a target application-based design approach for RF MEMS switches using
artificial neural networks (ANN) is presented. ANN approach is used to decide the
dimensions of the RF MEMS switch for the targeted application. The ANN approach design
and analysis is done using MATLAB. The results obtained by ANN method are validated
using the FEM tool simulation, which show that the developed models have good accuracy
over the range of switch dimension values for the intended application. The switch …
Abstract
In this paper, a target application-based design approach for RF MEMS switches using artificial neural networks (ANN) is presented. ANN approach is used to decide the dimensions of the RF MEMS switch for the targeted application. The ANN approach design and analysis is done using MATLAB. The results obtained by ANN method are validated using the FEM tool simulation, which show that the developed models have good accuracy over the range of switch dimension values for the intended application. The switch dimensions are extracted for L, S, C, X, Ku, K, and Ka-band applications using ANN. Eventually, a novel RF MEMS switch based on the ANN approach for C-band applications is proposed. The required pull-in voltage will increase because of perforation, and this problem is handled by adding extra weight to the membrane with pillars and slabs. Analyzed load distribution in membrane with perforation. FEM design is implemented using solid mechanics and electrostatic-based Multi-physics in COMSOL environment. Different studies, i.e., stationary, time-dependent, and frequency domain are performed to extract electrical, mechanical, and Radio Frequency parameters of the proposed design. The switch designed for C-band applications offering an actuation voltage of 7.4 V, Insertion loss of − 0.2 dB, and Isolation loss of − 57 dB.
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