Ti/p-Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (R_s), ideality factor (n) and barrier height (Φ_b) of Ti/p-Si Schottky diodes was investigated with the help of current–voltage (I–V) and capacitance–voltage (C–V) characteristics. Schottky diodes have been annealed at temperatures from 50 to 200 °C for 1 min in N₂ atmosphere. Φ_b, R_s and n were determined using Cheung and Norde functions in current–voltage characteristics. The Schottky barrier height of the as-deposited contact is found to be 0.747 eV (I–V), 1.038 eV (C–V), 0.622 eV [H(I)–I] and 0.786 eV [F(V)–V] and ideality factor as 1.3 (I–V) and 3.55 [dV/d(lnI)–I]. It has been seen that the barrier height, ideality factor and series resistance have changed with increasing annealing temperature up to 200 °C.