The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
RA Oliver, FCP Massabuau, MJ Kappers… - Applied Physics …, 2013 - pubs.aip.org
Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well
(QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width
(formed when, during growth, the InGaN is exposed unprotected to high temperatures) give
higher room temperature quantum efficiencies than continuous QWs. The efficiency does not
depend on the growth temperature of the GaN barriers. Temperature-dependent
electroluminescence measurements suggest that the higher efficiency results from higher …
(QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width
(formed when, during growth, the InGaN is exposed unprotected to high temperatures) give
higher room temperature quantum efficiencies than continuous QWs. The efficiency does not
depend on the growth temperature of the GaN barriers. Temperature-dependent
electroluminescence measurements suggest that the higher efficiency results from higher …
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