Differences on carbon content and chemical bonds in a-Si1xCx: H were observed and
analyzed in carbon rich and silicon rich films, deposited by plasma enhanced chemical
vapor deposition from mixtures of silane and methane. The influence of the radio frequency
low power density regime on the film's properties was investigated. The content of Si, C, and
H in the solid phase was obtained by Rutherford back scattering and forward recoil
spectrometry. The bondings were analyzed by Fourier transform infrared spectroscopy …