Within the framework of a staircase infinitely deep potential well model, the mobility of
charge carriers is calculated for scattering on impurity centers located on the axis of a size-
quantized semiconducting coated wire. Calculations are done for the dielectric constant
mismatch of the wire, coating and surrounding environment, taking into account the
difference of the effective masses in the wire and coating. The effect of a longitudinal
magnetic field on mobility is also considered. Numerical results are presented for the GaAs …