… -Si layer is grown after the high-temperature diffusion process. The results of this study show
that the new b-Si solar cell performance parameters are improved … (p-type) c-Si wafers (100) …

… high-temperature processing steps. Shallow marking may increase particulate levels in wafers,
… Also, if the “hump” is too high, in wafer-bonding processes, shallow-marked wafers may …

… other rapid thermal processing methods in silicon processing [3]–… Si substrate by low
temperature MWA or rapid thermal … coupling effects of Si and quartz susceptor wafers to improve …

… after a 30 min anneal at 450C, where improved surface passivation properties are achieved.
… values measured on different silicon substrates before and after surface passivation with a …

… of the silicon wafer in the production of high-efficiency solar cells. In this process, the surface
… better interpolator properties than polynomial models, (ii) having very good asymptotic …

… Thermal nitridation of such Si02 films improves the MOS characteristics by producing surface
… The nitroxide process entails heating of a thermally oxidized silicon wafer in pure ammonia …

… improved responsivity after rapid thermal annealing. Solar cells … silicon wafer with electrical
resistivity of 1–3 Ω cm was utilized in the present work. To texture the solar cell, the wafers …

… ms after thermal annealing of only 10 re.in using an infrared lamp furnace. The characteristics
of a detector produced by using the improved neutron transmutation doped silicon crystal …

… optical properties of the deposited thin film were improved … of ZnO nanocrystallites after
thermal annealing process. … of other semiconductor nanostructures on porous silicon substrate. …

… CZ p-type silicon wafers, which have a resistivity of 1.0∼3.0 … ) on the wafer surface is increased
according to an increase of … that the improved characteristics were due to the low impurity …