Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime
The aim of this paper is to optimize the growth conditions of thick boron doped diamond
single crystals, which requires the use of high microware power density to have high growth
rate, in order to allow enlarging CVD deposited layers keeping both high boron doping level
and high crystal quality. It is shown that the use of a high amount of oxygen (1 to 2%) in the
gas phase leads to 1 mm lateral growth after the growth of 500 μm-thick CVD diamond layer.
Thus, the surface is increased from 10 mm 2 to 18 mm 2. The obtained films exhibit high …
single crystals, which requires the use of high microware power density to have high growth
rate, in order to allow enlarging CVD deposited layers keeping both high boron doping level
and high crystal quality. It is shown that the use of a high amount of oxygen (1 to 2%) in the
gas phase leads to 1 mm lateral growth after the growth of 500 μm-thick CVD diamond layer.
Thus, the surface is increased from 10 mm 2 to 18 mm 2. The obtained films exhibit high …
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