Thickness-dependent bulk properties and weak antilocalization effect in topological insulator BiSe
Physical Review B—Condensed Matter and Materials Physics, 2011•APS
We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170
μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited
formation of selenium vacancies. Mobility increased linearly with thickness in the thin film
regime and saturated in the thick limit. The weak antilocalization effect was dominated by a
single two-dimensional channel over two decades of thickness. The sublinear thickness …
striking thickness dependences over a range of up to five orders of thickness (3 nm–170
μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited
formation of selenium vacancies. Mobility increased linearly with thickness in the thin film
regime and saturated in the thick limit. The weak antilocalization effect was dominated by a
single two-dimensional channel over two decades of thickness. The sublinear thickness …
We show that a number of transport properties in topological insulator (TI) BiSe exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm–170 μm). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak antilocalization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.
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