Three color infrared detector using InAs/GaSb superlattices with unipolar barriers
We report on a three color heterojunction band gap engineered type-II InAs/GaSb strained-
layer superlattice photodiode for short-wave infrared (SWIR), mid-wave infrared (MWIR), and
long-wave infrared (LWIR) detection. The reported structure is a three contact device with
nBn architecture for SWIR and MWIR and heterojunction PIbN architecture for LWIR
detection. At 77 K, the cutoff wavelength for SWIR, MWIR, and LWIR regions are 3.0 μ m,
4.7 μ m, and 10.1 μ m, respectively. The reported architecture can be used for …
layer superlattice photodiode for short-wave infrared (SWIR), mid-wave infrared (MWIR), and
long-wave infrared (LWIR) detection. The reported structure is a three contact device with
nBn architecture for SWIR and MWIR and heterojunction PIbN architecture for LWIR
detection. At 77 K, the cutoff wavelength for SWIR, MWIR, and LWIR regions are 3.0 μ m,
4.7 μ m, and 10.1 μ m, respectively. The reported architecture can be used for …
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