Tomographic investigation of fermi level pinning at focused ion beam milled semiconductor surfaces
Electron holography in the transmission electron microscope (TEM) offers the spatial and
signal resolution for studying effects like Fermi level pinning or dopant concentration
variations important for the design of modern electronic devices. To overcome the loss of
information along the projection direction, surface effects, and surface damage due to TEM
specimen preparation, we apply electron holographic tomography to analyze the 3D
potential distribution of semiconductor samples prepared by focused-ion-beam. We observe …
signal resolution for studying effects like Fermi level pinning or dopant concentration
variations important for the design of modern electronic devices. To overcome the loss of
information along the projection direction, surface effects, and surface damage due to TEM
specimen preparation, we apply electron holographic tomography to analyze the 3D
potential distribution of semiconductor samples prepared by focused-ion-beam. We observe …
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