With scaling of semiconductor devices showing no signs of abating and three-dimensional
structures now being developed, new metrologies to meet these demands are being sought.
Atom probe tomography offers the potential to meet these challenges, and here, the authors
present an in-depth study focused on finding useable conditions for accurate stoichiometric
analysis of GaN and AlGaN. By varying the laser energy/power, changes in the average tip
field were induced, and the resulting impact on the measured stoichiometry was …