Towards mm-wave nanoelectronics and RF switches using MoS2 2D Semiconductor
2018 IEEE/MTT-S International Microwave Symposium-IMS, 2018•ieeexplore.ieee.org
In this paper, we report state-of-the-art large area CVD monolayer MoS 2-based RF
transistors and RF switches. An embedded gate structure was used to fabricate short
channel CVD Mos 2 Rf FETs with an intrinsic f T of 20 GHz, intrinsic f max of 11.4 GHz, and
the high-field saturation velocity V sat of 1.88× 10 6 cm/s. The gate-first process allows for
enhancement mode operation, ION/IOFF ratio of 10 8, and a transconductance (gm) of 70
μS/μm. Also, we use a vertical MIM structure for a RF switch based on CVD Mos 2. The …
transistors and RF switches. An embedded gate structure was used to fabricate short
channel CVD Mos 2 Rf FETs with an intrinsic f T of 20 GHz, intrinsic f max of 11.4 GHz, and
the high-field saturation velocity V sat of 1.88× 10 6 cm/s. The gate-first process allows for
enhancement mode operation, ION/IOFF ratio of 10 8, and a transconductance (gm) of 70
μS/μm. Also, we use a vertical MIM structure for a RF switch based on CVD Mos 2. The …
In this paper, we report state-of-the-art large area CVD monolayer MoS 2 -based RF transistors and RF switches. An embedded gate structure was used to fabricate short channel CVD Mos 2 Rf FETs with an intrinsic f T of 20 GHz, intrinsic f max of 11.4 GHz, and the high-field saturation velocity V sat of 1.88×10 6 cm/s. The gate-first process allows for enhancement mode operation, ION/IOFF ratio of 10 8 , and a transconductance (g m ) of 70 μS/μm. Also, we use a vertical MIM structure for a RF switch based on CVD Mos 2 . The device was programmed with a voltage as low as 1 V, and achieves an ON-state resistance of ~5 Ω and an OFF-state capacitance of ~6 fF. We measured and simulated the RF performance of the device up to 50 GHz and report 0.5 dB insertion loss, 15 dB isolation (both at 50 GHz), and 5 THz cutoff frequency.
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