[PDF] academia.edu

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

A Nourbakhsh, A Zubair, MS Dresselhaus… - Nano …, 2016 - ACS Publications
This paper studies band-to-band tunneling in the transverse and lateral directions of van der
Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential
resistance (NDR) in a heterojunction diode comprised of few-layer WSe2 stacked on
multilayer MoS2. The presence of NDR is attributed to the lateral band-to-band tunneling at
the edge of the MoS2/WSe2 heterojunction. The backward tunneling diode shows an
average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V–1 …
被引用次数：552 相关文章 所有 8 个版本
[PDF] mit.edu

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios - 2016 - dspace.mit.edu
This paper studies band-to-band tunneling in the transverse and lateral directions of van der
Waals MoS₂/WSe₂ heterojunctions. We observe room-temperature negative differential
resistance (NDR) in a heterojunction diode comprised of few-layer WSe₂ stacked on
multilayer MoS₂. The presence of NDR is attributed to the lateral band-to-band tunneling at
the edge of the MoS₂/WSe₂ heterojunction. The backward tunneling diode shows an
average conductance slope of 75 mV/dec with a high curvature coefficient of 62 V–1 …
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