UWB transmitter in BiCMOS SiGe 0.13 μm technology for 60 GHz WLAN communication
M Devulder, N Deparis, I Telliez… - … Conference on Ultra …, 2007 - ieeexplore.ieee.org
M Devulder, N Deparis, I Telliez, S Pruvost, F Danneville, N Rolland, PA Rolland
2007 IEEE International Conference on Ultra-Wideband, 2007•ieeexplore.ieee.orgThis paper presents a 60 GHz ultra-wideband (UWB) transceiver for indoor communication
using SiGe BiCMOS technology. To simplify the design, the transmitter architecture is based
on single-ended functions. This work describes a Single-Pole Single-Throw (SPST) switch
and a Low Noise Amplifier (LNA) at 60 GHz. These two circuits were designed in SiGe
BiCMOS 0.13 μm technology. The RF-switch presents a 40 dB ON/OFF ratio at 60 GHz and
the LNA exhibits a 16 dB gain and a noise figure of 8 dB.
using SiGe BiCMOS technology. To simplify the design, the transmitter architecture is based
on single-ended functions. This work describes a Single-Pole Single-Throw (SPST) switch
and a Low Noise Amplifier (LNA) at 60 GHz. These two circuits were designed in SiGe
BiCMOS 0.13 μm technology. The RF-switch presents a 40 dB ON/OFF ratio at 60 GHz and
the LNA exhibits a 16 dB gain and a noise figure of 8 dB.
This paper presents a 60 GHz ultra-wideband (UWB) transceiver for indoor communication using SiGe BiCMOS technology. To simplify the design, the transmitter architecture is based on single-ended functions. This work describes a Single-Pole Single-Throw (SPST) switch and a Low Noise Amplifier (LNA) at 60 GHz. These two circuits were designed in SiGe BiCMOS 0.13 μm technology. The RF-switch presents a 40 dB ON/OFF ratio at 60 GHz and the LNA exhibits a 16 dB gain and a noise figure of 8 dB.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果