Silicon carbide (SiC) mosfet s offer significant advantages in terms of improved efficiency
and reduced size of power electronic converters. However, they possess lesser short-circuit
withstand time than silicon devices. An ultrafast short-circuit protection scheme for TO-247
packaged SiC mosfet s is presented in this article. The protection scheme utilizes printed
circuit board (PCB) coils to sense the rate of change of current through SiC mosfet s in a half-
bridge circuit. The PCB coils are fabricated near a single interconnect trace between the …

Silicon Carbide (SiC) MOSFETs offer significant advantages in terms of improved efficiency
and reduced size of power electronic converters. However, they possess lesser short circuit
withstand time (SCWT) than silicon devices. Consequently, protection circuits for SiC
MOSFETs should have a sub-microsecond response time for ensuring device safety. An
ultrafast short-circuit protection scheme for TO 247 packaged SiC MOSFETs is presented in
this article. The protection scheme utilizes PCB coils to sense the rate of change of current …