Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron …
H Dong, S Pang, Y Xu, Z Li, Z Zhang… - … Applied Materials & …, 2020 - ACS Publications
The performance of perovskite solar cells (PSCs), especially for the parameters of open-
circuit voltage (V oc) and fill factor, is seriously restricted by the unavoidable interfacial
charge recombination. In this study, an ultrawide band gap semiconductor material of
Ga2O3 is introduced between fluorine-doped tin oxide and SnO2 to regulate the interfacial
charge dynamics by forming the Ga2O3/SnO2 electron-transporting bilayer. Ga2O3 has an
appropriate conduction band minimum which benefits the electron transport, and at the …
circuit voltage (V oc) and fill factor, is seriously restricted by the unavoidable interfacial
charge recombination. In this study, an ultrawide band gap semiconductor material of
Ga2O3 is introduced between fluorine-doped tin oxide and SnO2 to regulate the interfacial
charge dynamics by forming the Ga2O3/SnO2 electron-transporting bilayer. Ga2O3 has an
appropriate conduction band minimum which benefits the electron transport, and at the …
[引用][C] Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga₂O₃/SnO₂ Composite Electron …
H Dong, S Pang, Y Xu, Z Li, Z Zhang, W Zhu, D Chen… - 2020
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