Valence band structure calculations of GaAs/GaxIn1-xP strained-layer quantum wells
Valence band structure of GaAs/Ga x In 1-x P strained-layer quantum wells are investigated
within an envelope function formalism which takes into account the valence subbands
mixing through the Luttinger-Kohn Hamiltonian and the strain effects due to the lattice-
mismatch through the Pikus-Bir Hamiltonian. For a Ga mole fraction x greater than 0.516
(compression), the top valence band is heavy-hole-like. For x less than 0.516 (tension
strain), the top valence subband can be either heavy-hole-like or light-hole-like, depending …
within an envelope function formalism which takes into account the valence subbands
mixing through the Luttinger-Kohn Hamiltonian and the strain effects due to the lattice-
mismatch through the Pikus-Bir Hamiltonian. For a Ga mole fraction x greater than 0.516
(compression), the top valence band is heavy-hole-like. For x less than 0.516 (tension
strain), the top valence subband can be either heavy-hole-like or light-hole-like, depending …