interconnects while considering defects and contact resistance is proposed. Based on the
atomistic-level simulations, we have found that defect densities impact MWCNT resistance
and ultimately their electrical performance. Furthermore, we have computed by atomistic-
level simulations, the end-contact resistance between single-wall carbon nanotube and
palladium (Pd) electrode to mimic the Pd–CNT end-contact resistance of each CNT shell in …
In this paper, the impact of charge transfer doping on the variability of multiwalled carbon
nanotube (MWCNT) local interconnects is studied by experiments and simulations. We
calculate the number of conducting channels of both metallic and semiconducting carbon
nanotubes as a function of Fermi level shift due to doping based on the calculation of
transmission coefficients. By using the MWCNT compact model proposed in Part I of this
paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to …