The preparation of WTe₂ by isothermal tellurium annealing of sputtered W or WO₃ precursors is reported. X‐ray diffraction, energy dispersive, and Raman spectroscopies confirm the presence of 1T́ WTe₂ phase in the annealed films which are preferentially oriented with the [001] crystallographic direction normal to the surface. Atomic force microscopy images indicate noticeable morphology differences between thin samples tellurized from different precursors. Rounded small grains or small platelets are obtained when W and WO₃ precursor are used, respectively.