Graphene field-effect transistors based on boron–nitride dielectrics
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
Boron nitride substrates for high-quality graphene electronics
Graphene devices on standard SiO 2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene 1, 2, 3, 4 …
characteristics that are far inferior to the expected intrinsic properties of graphene 1, 2, 3, 4 …
Monolayer graphene/hexagonal boron nitride heterostructure
A buried metal-gate field-effect transistor (FET) using a stacked hexagonal boron nitride (h-
BN) and chemically vapor deposited (CVD) graphene heterostructure is demonstrated. A …
BN) and chemically vapor deposited (CVD) graphene heterostructure is demonstrated. A …
Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays
S Fukamachi, P Solís-Fernández, K Kawahara… - Nature …, 2023 - nature.com
Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical
properties of other two-dimensional materials in device structures. However, integrating the …
properties of other two-dimensional materials in device structures. However, integrating the …
Tunable band gaps in bilayer graphene− BN heterostructures
A Ramasubramaniam, D Naveh, E Towe - Nano letters, 2011 - ACS Publications
We investigate band gap tuning of bilayer graphene between hexagonal boron nitride
sheets, by external electric fields. Using density functional theory, we show that the gap is …
sheets, by external electric fields. Using density functional theory, we show that the gap is …
A platform for large‐scale graphene electronics–CVD growth of single‐layer graphene on CVD‐grown hexagonal boron nitride
After graphene emerged as a material with the potential to supplant silicon in future
electronic devices because of its superior electronic properties, there has been a flurry of …
electronic devices because of its superior electronic properties, there has been a flurry of …
Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices
Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based
electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by …
electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by …
Direct growth of graphene/hexagonal boron nitride stacked layers
Graphene (G) and atomic layers of hexagonal boron nitride (h-BN) are complementary two-
dimensional materials, structurally very similar but with vastly different electronic properties …
dimensional materials, structurally very similar but with vastly different electronic properties …
Electrostatic doping of graphene through ultrathin hexagonal boron nitride films
When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and
gate dielectric with which to build metal| h-BN| graphene field-effect devices. We use first …
gate dielectric with which to build metal| h-BN| graphene field-effect devices. We use first …
Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition
Graphene–boron nitride monolayer heterostructures contain adjacent electrically active and
insulating regions in a continuous, single-atom thick layer. To date structures were grown at …
insulating regions in a continuous, single-atom thick layer. To date structures were grown at …