We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using
sequential exposures of SF 6 plasma and trimethylaluminum [Al (CH 3) 3]. ALE was …

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …

Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …

Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …

Atomic layer etching (ALE) is a promising technique that can solve the challenges
associated with continuous or pulsed plasma processes—trade-offs between selectivity …

Plasma atomic layer etching is a dry etching process using a dose step to modify a material's
surface chemistry and an etch step to remove the modified surface layer. This method of …

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature,
200 C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion …

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …

The dry etching of high crystal quality c-plane AlN grown by metal organic chemical vapor
deposition was examined as a function of source and chuck power in inductively coupled …

Nickel (Ni) and its alloys are important multifunctional materials for the fabrication of
integrated circuits, as either the absorber for the extreme ultraviolet lithography masks …