Hysteresis‐free hexagonal boron nitride encapsulated 2D semiconductor transistors, NMOS and CMOS inverters
Graphene and subsequently discovered layered semiconducting transition metal
dichalcogenides (TMDCs) exhibit numerous exotic physical properties and broad potential …
dichalcogenides (TMDCs) exhibit numerous exotic physical properties and broad potential …
Two-dimensional flexible nanoelectronics
Abstract 2014/2015 represents the tenth anniversary of modern graphene research. Over
this decade, graphene has proven to be attractive for thin-film transistors owing to its …
this decade, graphene has proven to be attractive for thin-film transistors owing to its …
Flexible device applications of 2D semiconductors
L Gao - Small, 2017 - Wiley Online Library
Graphene‐like single‐or few‐layer semiconductors, such as dichalcogenides and buckled
nanocrystals, possess direct and tunable bandgaps, and excellent electrical, optical …
nanocrystals, possess direct and tunable bandgaps, and excellent electrical, optical …
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2)
have been intensively studied because of their novel properties for advanced electronics …
have been intensively studied because of their novel properties for advanced electronics …
Two-dimensional transistors beyond graphene and TMDCs
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …
Low-voltage complementary electronics from ion-gel-gated vertical van der Waals heterostructures
Graphene has attracted significant attention for high performance electronics due to its
superior electronic and physical properties. Yet, the absence of a band gap and the resulting …
superior electronic and physical properties. Yet, the absence of a band gap and the resulting …
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Atomically thin forms of layered materials, such as conducting graphene, insulating
hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have …
hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have …
Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures
The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two-
dimensional layered materials (2DLMs) have attracted considerable attention due to their …
dimensional layered materials (2DLMs) have attracted considerable attention due to their …
Wafer scale growth of single crystal two-dimensional van der Waals materials
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal
boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics …
boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics …
Two-dimensional transition metal dichalcogenides and their charge carrier mobilities in field-effect transistors
Abstract Two-dimensional (2D) materials have attracted extensive interest due to their
excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of …
excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of …