In this review we have examined the crystallization behavior of a-Si over the
temperaturerange from 500° C to∼ 1380° C. We have shown that SPE is a thermally …

Kinetik und Morphologie der Kristallisation amorpher Silizium-Schichten wird
elektronenmikroskopisch untersucht. Die Kristallisation erfolgt über thermisch aktivierte …

The kinetics of solid phase epitaxy (SPE) have been measured in MeV ion‐implanted
amorphous Si layers up to 5 μm thick. Epitaxial crystallization in these layers occurs at a …

Solid phase crystallization of thin films of undoped amorphous Si prepared by plasma
enhanced chemical vapor deposition has been studied by transmission electron microscopy …

Aluminum-induced crystallization of amorphous silicon is studied as a promising low-
temperature alternative to solid-phase and laser crystallization. Its advantages for the …

Amorphous Si layers have been melted by pulsed electron irradiation. Implanted As has
been used as a marker for determining melt duration. Systematic differences between As …

We present an experimental study of the first reported crystalamorphous phase transition
induced by ball-milling in a pure element: a silicon powder. Scanning electron microscope …

Bulk nucleation of crystalline Si at a supercooling of 505 K was observed following
pulsedlaser-induced melting of thin films. If the nucleation was homogeneous, the estimated …

Abstract Bombardment with 0.6-3-MeV Ne+ ions has been employed to stimulate solid-
phase epitaxial growth of amorphous silicon at temperatures 200-500 C. Two distinctly …

A general, quantitative model has been developed that provides fundamental understanding
of the metal‐induced crystallization (MIC) of amorphous semiconductors. Interface …