Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates
We demonstrated the fabrication of large-area ReS2 transistors and logic gates composed
of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor channel and …
of a chemical vapor deposition (CVD)-grown multilayer ReS2 semiconductor channel and …
All-2D ReS2 transistors with split gates for logic circuitry
Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides
(TMDs) and black phosphorus, are the most promising channel materials for future …
(TMDs) and black phosphorus, are the most promising channel materials for future …
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room …
Direct synthesis of large-area continuous ReS2 films on a flexible glass at low temperature
Rhenium disulfide (ReS 2) has been attracting attentions due to the direct bandgap
regardless of the thickness and anisotropic electrical, mechanical and optical properties …
regardless of the thickness and anisotropic electrical, mechanical and optical properties …
Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2
Abstract Two-dimensional (2D) transition-metal dichalcogenides (TMDs), most notably,
MoS2 and WS2, have attracted significant attention due to their sizable and direct bandgap …
MoS2 and WS2, have attracted significant attention due to their sizable and direct bandgap …
Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors
KC Lee, SH Yang, YS Sung, YM Chang… - Advanced Functional …, 2019 - Wiley Online Library
Complementary circuits based on 2D materials show great promise for next‐generation
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …
[HTML][HTML] Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
Semiconducting two-dimensional transition metal dichalcogenides are emerging as top
candidates for post-silicon electronics. While most of them exhibit isotropic behaviour …
candidates for post-silicon electronics. While most of them exhibit isotropic behaviour …
Chemical Vapor Deposition of High‐Quality and Atomically Layered ReS2
Recently, anisotropic 2D materials, such as black phosphorus and rhenium disulfides
(ReS2), have attracted a lot attention because of their unique applications on electronics …
(ReS2), have attracted a lot attention because of their unique applications on electronics …
Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application
As an anisotropic 2D layered material, rhenium disulfide (ReS2) has attracted much
attention because of its unusual properties and promising applications in electronic and …
attention because of its unusual properties and promising applications in electronic and …
ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory
B Mukherjee, R Hayakawa, K Watanabe… - Advanced Electronic …, 2021 - Wiley Online Library
A 2D heterostructure consisting of few‐layer direct bandgap ReS2, a thin h‐BN layer, and a
monolayer graphene (Gr) for application to various electronic devices is investigated. Metal …
monolayer graphene (Gr) for application to various electronic devices is investigated. Metal …