The nucleation kinetics of the amorphous‐to‐crystal transition of Si films under 1.5 MeV Xe+
irradiation have been investigated by means of in situ transmission electron microscopy in …

Abstract The effect of 1.5 MeV Xe+ irradiation at elevated substrate temperatures on the
crystal nucleation rate and on the subsequent crystal growth rate in amorphous Si has been …

The ability to selectively suppress crystal nucleation during the crystallization of amorphous
Si films is often desirable, but is not generally possible. We demonstrate that a periodic two …

Crystallization of amorphous Si films on a glass substrate by Si+ implantation (acceleration
energy: 180 keV, beam current density: 10 μA/cm, ion dose: 1× 1017 ions/cm2) was …

Amorphous Si is nucleated heterogeneously at grain boundaries during irradiation of
polycrystalline Si thin films by 1.5 MeV Xe+ ions for temperatures of 150–225° C. Moreover …

The nucleation of crystal grains in amorphous silicon induced by 600 keV Kr or Ar irradiation
is investigated. It is shown that at 500 C the nucleation rate is greatly enhanced with respect …

During irradiation of polycrystalline Si thin films by 1.5 MeV Xe+ ions, amorphous Si is
nucleated heterogeneously at internal interfaces, such as grain boundaries and stacking …

Abstract Ion irradiation (600 keV Xe+) at high temperatures and low irradiation ion fluxes
greatly enhances the nucleation rate of crystalline silicon in an amorphous matrix, but has a …

The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor
deposited silicon layers has been studied in the temperature range 320-480 0c. At each …