Low-dimensional half-metallic (HM) systems are invaluable for future spintronics. Yet a
definitive experimental demonstration of HM characteristic in two-dimensional (2D) materials …

The ever increasing level of control in the fabrication of graphene/hexagonal boron nitride (h-
BN) lateral heterostructures makes it promising for material realization of exotic electronic …

As research in 2-D materials evolves toward combinations of different materials, interesting
electronic and spintronic properties are revealed and may be exploited in future devices. A …

Realization of half-metallicity in low dimensional materials is a fundamental challenge for
nano spintronics, which is a critical component for next-generation information technology …

Very recently, the lateral heterojunctions of hexagonal boron nitride (h-BN)/graphene were
experimentally realized for the time. To study the related properties of such heterojunctions …

Half-metals have been envisioned as active components in spintronic devices by virtue of
their completely spin-polarized electrical currents. Actual materials hosting half-metallic …

Planar graphene/h-BN (GPBN) heterostructures promise low-dimensional magnetic
semiconductor materials of tunable bandgap. In the present study, interplay between 3d …

Abstract Recently, two-dimensional (2D) BCN, an in-plane heterostructure formed by
graphene and hexagonal boron nitride, has been successfully synthesized experimentally …

Recent experiments indicate that Bernal stacked graphene multilayers (BGMs) have an
interaction-induced gapped (or pseudogapped) ground state. Here, we propose that, due to …

The modulation of the interface topography in two-dimensional (2D) lateral heterostructure
(LHS) is significant for adjusting their electronic properties. However, previous theoretical …