When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and
gate dielectric with which to build metal| h-BN| graphene field-effect devices. We use first …

We investigate band gap tuning of bilayer graphene between hexagonal boron nitride
sheets, by external electric fields. Using density functional theory, we show that the gap is …

Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based
electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by …

Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …

We determine the electronic structure of a graphene sheet on top of a lattice-matched
hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The …

By performing density functional theory calculations we show that it is possible to make the
electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) …

The electronic properties of a graphene–boron nitride (G/BN) bilayer have been carefully
investigated by first-principles calculations. We find that the energy gap of graphene is …

Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal
structure, has the potential to fabricate heterostructures with unusual properties. We perform …

We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic
and electronic structure of boron-doped and nitrogen-doped graphene created by chemical …

We report the results of a theoretical study of graphene/BN/graphene and BN/graphene/BN
trilayers using the van-der-Waals-corrected density functional theory in conjunction with the …