Anti-ambipolar field-effect transistors based on few-layer 2D transition metal dichalcogenides

Y Li, Y Wang, L Huang, X Wang, X Li… - … Applied Materials & …, 2016 - ACS Publications
Two-dimensional (2D) materials and their related van der Waals heterostructures have
attracted considerable interest for their fascinating new properties. There are still many …

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey

F Qian, X Bu, J Wang, JY Mao, ST Han… - Journal of Materials …, 2022 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (TMDs) have attracted significant
scientific research interest in recent years due to their lack of dangling bonds, ultrathin body …

Doping, contact and interface engineering of two‐dimensional layered transition metal dichalcogenides transistors

Y Zhao, K Xu, F Pan, C Zhou, F Zhou… - Advanced Functional …, 2017 - Wiley Online Library
Owing to an ultrathin body, atomic scale smoothness, dangling bond‐free surface, and
sizable bandgap, transistors based on two‐dimensional (2D) layered semiconductors show …

Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies

M Cheng, J Yang, X Li, H Li, R Du, J Shi, J He - Frontiers of Physics, 2022 - Springer
Abstract Two-dimensional (2D) semiconductors are emerging as promising candidates for
the next-generation nanoelectronics. As a type of unique channel materials, 2D …

Electric field effect in two‐dimensional transition metal dichalcogenides

F Liu, J Zhou, C Zhu, Z Liu - Advanced Functional Materials, 2017 - Wiley Online Library
Two‐dimensional (2D) materials have been an emerging platform for future device
applications. Among them, 2D transition metal dichalcogenides (TMDs) have attracted …

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

W Liao, S Zhao, F Li, C Wang, Y Ge, H Wang… - Nanoscale …, 2020 - pubs.rsc.org
Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have
attracted tremendous research interest for future electronics owing to their atomically thin …

MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field‐Effect Transistors and Inverter Circuits

X He, WL Chow, F Liu, BK Tay, Z Liu - Small, 2017 - Wiley Online Library
2D transition metal dichalcogenides are promising channel materials for the next‐
generation electronic device. Here, vertically 2D heterostructures, so called van der Waals …

Van der Waals junction field effect transistors with both n-and p-channel transition metal dichalcogenides

JY Lim, M Kim, Y Jeong, KR Ko, S Yu… - npj 2D Materials and …, 2018 - nature.com
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der
Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize …

Configuration-dependent anti-ambipolar van der Waals p–n heterostructures based on pentacene single crystal and MoS 2

J Dong, F Liu, F Wang, J Wang, M Li, Y Wen, L Wang… - Nanoscale, 2017 - pubs.rsc.org
Recently, van der Waals heterostructures (vdWHs) have trigged intensive interest due to
their novel electronic and optoelectronic properties. The vdWHs could be achieved by …

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide

T Das, S Youn, JE Seo, E Yang… - ACS Applied Materials & …, 2023 - ACS Publications
Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …