A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made ScxAl1− xN a promising material in …

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …

Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …

In the present work, we investigate the effect of substrate temperature and RF bias power on
the dry etching process of Al0. 7Sc0. 3N thin films. Increasing the substrate temperature from …

Scandium-doped Aluminum Nitride (Sc_xAl_1-xN) is reported to have attractive
piezoelectric, pyroelectric and electro-optic properties with increased Sc concentration …

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying
with scandium (Sc), thus offering superior properties for applications in micro electro …

We investigate the inductively coupled plasma (ICP) etching characteristics of (0002)
Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 0.94 Sc 0.06 N) piezoelectric …

Typical LOCOS includes using a thin oxide layer between the nitride mask and the Silicon
wafer to provide StreSS relief during thermal oxidation. However, thermal oxidation of …

Sc_XAl_-XN is a promising material to expand the application range of nitride materials,
since scandium increases the piezoelectric constants while retaining the crystalline wurtzite …

Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …