Hydrogenated amorphous and nanocrystalline silicon films manufactured by plasma
deposition techniques are used widely in electronic and optoelectronic devices,. The …

Hydrogen atoms can selectively eliminate strained bonds that form during the growth of
amorphous silicon films. By periodically interrupting the growth and exposing the grown …

Using nuclear magnetic resonance (NMR) and infrared (ir) absorption spectroscopy, this
paper demonstrates the effects of deposition temperature, annealing temperature, and …

Thin films of polycrystalline silicon are of great importance for large-area electronic
applications, providing, for example, the switching electronics in many flat-panel displays …

It is proposed that the chemical equilibrium of hydrogen is an important factor in determining
the structure of thin films deposited from silane-hydrogen plasmas. Hydrogen interacts with …

The defects believed to limit the performance of devices fabricated using hydrogenated
amorphous silicon are identified as singly occupied dangling bonds. The formation of these …

We describe how high-quality intrinsic hydrogenated amorphous silicon (a-Si: H), as well as
purely intrinsic single-phase hydrogenated polycrystalline silicon (poly-Si: H), can be …

We investigate the mechanism for Si dangling bond defect creation in amorphous silicon
thin film transistors as a result of bias stress. We show that the rate of defect creation does …

High-hydrogen-diluted films of hydrogenated amorphous Si (a-Si: H) 0.5 μm in thickness
and optimized for solar cell efficiency and stability, are found to be partially microcrystalline …

Polycrystalline silicon polysilicon is used extensively in the fabrication of thin film transistors
TFTs. Polysilicon formed by the crystallization of amorphous silicon (a-Si) has far superior …