In this work, we present a method for growing highly c-axis oriented aluminum scandium
nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon …

This paper reports on the deposition and characterization of piezoelectric AlXSc1-XN
(further: AlScN) films on Si substrates using AlSc alloy targets with 30 at.% Sc. Films were …

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying
with scandium (Sc), thus offering superior properties for applications in micro electro …

Doped AlN thin films, especially high Sc-ratio AlScN film, have been reported to significantly
improve the piezoelectric properties and draw attention for high performance resonators …

Abstract Highly c-axis-oriented (002) of Sc x Al 1− x N thin films with high Sc concentration
(x) have drawn a significant attention in the bulk acoustic wave (BAW) and surface acoustic …

Piezoelectric aluminum nitride films were deposited onto 3 in.[0001] sapphire substrates by
reactive magnetron sputtering to explore the possibility of making highly (002)-textured AlN …

Non-polar a-plane Al 0.77 Sc 0.23 N 11 2 0 thin films were prepared by magnetron sputter
epitaxy on r-plane Al 2 O 3 (1 1 02) substrates. Different substrate off-cut angles were …

In the present work, the sputtering deposition conditions allowing the achievement of (002)-
oriented aluminum nitride (AlN) thin films on titanium (Ti) bottom electrode were assessed …

Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial
cubic silicon carbide (3C–SiC) layers on Si (100) substrates using alternating current …

This paper reports on the deposition of AlN and Al X Sc 1− XN films by pulse magnetron
sputtering. The first part will focus on the Al X Sc 1− XN deposition process in comparison to …