3D integration of dissimilar wafers through metal interconnect hybrid bonding has become
common practice in industry from CMOS image sensors to 3D NAND memory at >1μm …

Copper to copper hybrid bonding is a key area of development for many devices. A major
focus of hybrid bonding development is reducing the size of the bond pads. The current …

3D heterogeneous integration has become increasingly important as it allows continued
package system scaling in combination with transistor scaling to increase density and …

Copper/oxide hybrid bonding process has been extensively studied these past years as a
key enabler for 3D high density application with top and bottom tier interconnection pitch …

Hybrid bonding is key to achieving high-quality interconnect interfaces for fine pitch
integration. It has an advantage over other types of interconnects as it allows a high I/O …

3D architectures are increasingly making their way into commercial products such as image
sensors and 3D memory. While hybrid bonding exists today in wafer-to-wafer (W2W) format …

Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple
heterogeneous chips with high 3D interconnect density. We highlight recent design and …

Hybrid bonding pitch scaling is critical to continue to support higher chip to chip bandwidth
at reduced area and power overhead for chip-to-chip signaling. This paper discusses the …

This study presents groundbreaking outcomes of 400nm pitch wafer-to-wafer (W2W) hybrid
bonding connections with a Cu/SiCN bonding interface. A new test vehicle is introduced and …

This paper presents an investigation into the scaling of wafer-to-wafer (W2W) hybrid
bonding (HB) technology for the manufacture of advanced electronic devices. However, the …