W-band GaN MMIC PA with 257 mW output power at 86.5 GHz
P Xu, X Song, Y Lü, Y Wang, S Dun, J Yin… - Journal of …, 2015 - iopscience.iop.org
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC
PA) is reported. In order to manage coupling effects between all the parts of the W-band …
PA) is reported. In order to manage coupling effects between all the parts of the W-band …
Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
M Ćwikliński, C Friesicke, P Brückner… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
In this paper, we describe the design of the first reported full W-band (75–110 GHz) power
amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride …
amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride …
A three-stage wideband GaN PA for 5G mm-wave applications
This brief presents a three-stage wideband power amplifier (PA) monolithic microwave
integrated circuit (MMIC) using 100 nm GaN-on-Si process. A synthesized matching strategy …
integrated circuit (MMIC) using 100 nm GaN-on-Si process. A synthesized matching strategy …
GaN-based Power Amplifier MMIC and Module for D-Band Applications
D Schwantuschke, E Ture, P Brückner… - 2023 18th European …, 2023 - ieeexplore.ieee.org
This paper presents GaN-based power amplifier integrated circuits targeting D-band
frequencies. Two chips have been realized, using transistors with a gate length of 100 nm …
frequencies. Two chips have been realized, using transistors with a gate length of 100 nm …
A 24-28 GHz GaN MMIC Power Amplifier with Filtering Matching Networks
A Situ, Z Zhang, R Liang, Z Chen… - 2023 8th International …, 2023 - ieeexplore.ieee.org
This paper presents a two-stage power amplifier (PA) monolithic microwave integrated
circuit (MMIC) for 5G millimeter-wave (mmW) applications using a 0.15 µm GaN-on-SiC …
circuit (MMIC) for 5G millimeter-wave (mmW) applications using a 0.15 µm GaN-on-SiC …
Full D-Band GaN Power Amplifier MMIC and Waveguide Module
M Ćwikliński, N Riedmann, R Ziegler… - 2024 19th European …, 2024 - ieeexplore.ieee.org
In this article, we present a gallium nitride (GaN) power amplifier (PA) monolithic microwave
integrated circuit (MMIC) and waveguide module that cover the full D-band (110–170 GHz) …
integrated circuit (MMIC) and waveguide module that cover the full D-band (110–170 GHz) …
Broadband High-efficiency Three-Stage GaN Power Amplifier MMIC at Ka-Band
CD Shang, XW Zhu, ZM Zhao… - … Conference on Microwave …, 2022 - ieeexplore.ieee.org
The design and simulation of a Ka-band power amplifier Monolithic microwave integrated
circuits (MMIC) utilizing 0.15 μm gallium nitride (GaN) high electron mobility transistor …
circuits (MMIC) utilizing 0.15 μm gallium nitride (GaN) high electron mobility transistor …
W-band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN technology
W Shaobing, G Jianfeng, W Weibo… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC
PA) is reported. Electron-beam lithography has been employed to define a 100-nm T …
PA) is reported. Electron-beam lithography has been employed to define a 100-nm T …
AlGaN/GaN -Band 5-W MMIC Amplifier
AM Darwish, K Boutros, B Luo… - IEEE Transactions …, 2006 - ieeexplore.ieee.org
A broadband Ka-band AlGaN/GaN on SiC high electron-mobility transistor monolithic-
microwave integrated-circuit (MMIC) power amplifier was developed for millimeter-wave …
microwave integrated-circuit (MMIC) power amplifier was developed for millimeter-wave …
A GaN HEMT Based MMIC Power Amplifier Covering 75–130 GHz
Q Ge, B Dou, J Liu, X Yao - … Materials and Processes for RF and …, 2023 - ieeexplore.ieee.org
A 6-stage W-band MMIC power amplifier (PA) was designed and implemented, based on T-
gate gallium nitride (GaN) devices. The performance of the GaN high-electron-mobility …
gate gallium nitride (GaN) devices. The performance of the GaN high-electron-mobility …