We present electronic transport measurements of single and bilayer graphene on
commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 …

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor
deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are …

The field of graphene research has developed rapidly since its first isolation by mechanical
exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both …

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence of …

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices
exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as …

We present a fast method to fabricate high quality heterostructure devices by picking up
crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to …

In this letter, we report the observation of ballistic transport on micron length scales in
graphene synthesised by chemical vapour deposition (CVD). Transport measurements were …

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to
graphene device fabrication, but to date such graphene has exhibited lower mobility than …

We report on electronic properties of graphene synthesized by chemical vapor deposition
(CVD) on copper then transferred to SiO 2/Si⁠. Wafer-scale (up to 4 in.) graphene films have …

We have investigated the electron transport in graphene at different carrier densities. Single
layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a …