Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface
reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange …

Thermal atomic layer etching (ALE) can be achieved using sequential, self-limiting
fluorination and ligand-exchange reactions. Previous studies have demonstrated thermal …

Thermal etching of AlF 3 with dimethyl-aluminum chloride (DMAC) and thermal isotropic
atomic layer etching (ALE) of Al 2 O 3 with alternating anhydrous hydrogen fluoride (HF) and …

Atomic layer etching (ALE) of Al2O3, HfO2, and ZrO2 was accomplished using sequential
exposures with hydrogen fluoride (HF) as the fluorination reagent and dimethylaluminum …

Thermal atomic layer etching (ALE) is an important technique for the precise isotropic
etching of nanostructures. Thermal ALE of many materials can be achieved using a two-step …

Thermal Al2O3 atomic layer etching (ALE) can be performed using sequential, self-limiting
reactions with tin (II) acetylacetonate (Sn (acac) 2) and HF as the reactants. To understand …

We investigated the surface reaction of the thermal atomic layer etching (ALE) of Al 2 O 3
film using fluorine (F) radicals and trimethylaluminum (TMA). As a strong fluorination source …

The thermal atomic layer etching (ALE) of Al2O3 can be achieved using sequential
fluorination and ligand-exchange reactions. Although previous investigations have …

Thermal atomic layer etching (ALE) is an emerging technique that involves the sequential
removal of monolayers of a film by alternating self-limiting reactions, some of which generate …

Thermal atomic layer etching (ALEt) of amorphous Al2O3 was performed by alternate
exposures of niobium pentafluoride (NbF5) and carbon tetrachloride (CCl4). The ALEt of …