A 2D heterostructure consisting of few‐layer direct bandgap ReS2, a thin h‐BN layer, and a
monolayer graphene (Gr) for application to various electronic devices is investigated. Metal …

The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two-
dimensional layered materials (2DLMs) have attracted considerable attention due to their …

Few‐layer rhenium disulfide (ReS2) field‐effect transistors with a local floating gate (FG) of
monolayer graphene separated by a thin hexagonal boron nitride tunnel layer for …

Abstract Two-dimensional (2D) layered materials, such as graphene, hexagonal boron
nitride (h-BN), molybdenum disulfide (MoS ${} _ {2} $), have attracted tremendous interest …

The advent of graphene and related 2D materials has recently led to a new technology:
heterostructures based on these atomically thin crystals. The paradigm proved itself …

We present the fabrication and characterization of a flash memory device based on a van
der Waals (vdW) heterostructure comprising graphene (Gr), hexagonal boron nitride (h-BN) …

Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides
(TMDs) and black phosphorus, are the most promising channel materials for future …

Two-dimensional materials are of interest for the development of electronic devices due to
their useful properties and compatibility with silicon-based technology. Van der Waals …

The advent of graphene and related 2D materials, has recently led to a new technology:
heterostructures based on these atomically thin crystals. The paradigm proved itself …

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials
composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) …