Thermal Al2O3 atomic layer etching (ALE) can be performed using sequential, self-limiting
reactions with tin (II) acetylacetonate (Sn (acac) 2) and HF as the reactants. To understand …

Trimethylaluminum (TMA, Al (CH3) 3) was used as the metal precursor, together with HF, for
the atomic layer etching (ALE) of Al2O3 using sequential, self-limiting thermal reactions …

The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential, self-limiting
thermal reactions with tin (II) acetylacetonate (Sn (acac) 2) and hydrogen fluoride (HF) as the …

The thermal atomic layer etching (ALE) of Al 2 O 3 can be performed using sequential and
self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the …

Atomic layer etching (ALE) of Al2O3, HfO2, and ZrO2 was accomplished using sequential
exposures with hydrogen fluoride (HF) as the fluorination reagent and dimethylaluminum …

The atomic layer etching (ALE) of AlF3 was demonstrated using sequential thermal
reactions with Sn (acac) 2 and hydrogen fluoride (HF) as the reactants. AlF3 ALE is the first …

The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential HF and BCl3
exposures. BCl3 is a new precursor for thermal Al2O3 ALE that can provide pathways for …

A ZrO2 monolayer was demonstrated as a removable etch stop layer (ESL) for thermal
Al2O3 atomic layer etching (ALE) using HF and Al (CH3) 3 (trimethylaluminum (TMA)) as the …

The thermal atomic layer etching (ALE) of Al2O3 can be achieved using sequential
fluorination and ligand-exchange reactions. Although previous investigations have …

The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of
trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300° C. Ex situ X-ray reflectivity …