Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …

The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …

We fabricated an AlN ridge structure using a chlorine-based inductive-coupled plasma
reactive-ion etching (ICP-RIE) and a tetramethylammonium hydroxide (TMAH) solution. The …

Aluminum oxide (sapphire) is a well-known material having excellent chemical and physical
stability. Therefore, it has been widely used as a hard coating material in industrial …

Sapphire wafers which are generally used for the fabrication of GaN-based optoelectronic
devices are found to be very difficult in lapping, polishing, and cutting for packaging due to …

Inductively-coupled-plasma reactive ion etching of AlN was investigated using BCl3/Cl2/Ar
gas chemistry. AlN etch rates were studied as a function of substrate bias voltage (− 150 to …

A systematic study of the nonselective and smooth etching of GaN/AlGaN heterostructures
was performed using Cl 2/Ar/BCl 3 inductively coupled plasmas (ICPs). Nonselective …

The plasma produced by the mixture of fluoride and argon (SF6/Ar) was applied for the dry
etching of AlN films. Very high etching rate up to 140nm/min have been observed. The …

A systematic study of the nonselective and smooth etching of GaN/AlGaN heterostructures
was performed using Cl 2/Ar/BCl 3 inductively coupled plasmas (ICP). Nonselective etching …

Slow and smooth etching of gallium nitride (GaN) by BCl 3/Cl 2-based inductively coupled
plasma (ICP) is investigated in this paper. The effects of etch parameters, including ICP …