Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer

AD Saragih, DH Kuo, TTA Tuan - Journal of Materials Science: Materials in …, 2017 - Springer
CuSbS 2 thin film solar cell with 2.99% efficiency has been demonstrated by using the Cd-
free GaN and In 0.15 Ga 0.85 N as n-type semiconductor bilayer. CuSbS 2 films on the TiN …

Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO

WL Chen, DH Kuo, TTA Tuan - Journal of electronic materials, 2016 - Springer
CuSbS 2 films were fabricated by co-sputtering with the (Cu+ Sb 2 S 3) target at powers of
50 W, 55 W, and 60 W and a Cu target at 2 W under the deposition temperature of 300° C for …

In situ growth of CuSbS2 thin films by reactive co-sputtering for solar cells

L Kang, L Zhao, L Jiang, C Yan, K Sun, BK Ng… - Materials Science in …, 2018 - Elsevier
CuSbS 2 thin films were in situ grown by reactive co-sputtering and the effects of the growth
temperature on film composition, structure and morphology were investigated. It is …

Development of phase-pure CuSbS2 thin films by annealing thermally evaporated CuS/Sb2S3 stacking layer for solar cell applications

MI Medina-Montes, E Campos-González… - Materials Science in …, 2018 - Elsevier
In this work, we report the preparation and study of phase-pure CuSbS 2 thin films fabricated
by a two-stage process; 1) the growth of CuS/Sb 2 S 3/glass by stacking layers through a …

Fabrication and photovoltaic properties of Cu2ZnSnS4/ia-Si/na-Si thin film solar cells

F Jiang, H Shen - Applied surface science, 2013 - Elsevier
Cu2ZnSnS4 (CZTS) films were successfully prepared by sulfurization of Zn/Sn/Cu
multilayers at different temperatures from 350–575̊C. The film sulfurized at 500̊C …

Solar cell fabrication from semiconducting Cu3SbS3 on n-Si: Parameters evolution

SA Zaki, MI Abd-Elrahman, AA Abu-Sehly… - Materials Science in …, 2020 - Elsevier
Abstract Cu 3 SbS 3 (CAS) thin films are synthesized by the conventional thermal
evaporation technique. The induced effects in optical and morphological properties of these …

[HTML][HTML] Doping the bismuth into the host's Cu2ZnSnS4 semiconductor as a novel material for thin film solar cell

H Hussein, A Yazdani - Results in Physics, 2019 - Elsevier
In this report for the first time, the Cu 2 Zn 1-x Bi x SnS 4 (CZBiTS) semiconductor at (0≤ x≤
1) has been synthesized using the solvothermal and spin coating methods. The structural …

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

B Patel, R Narasimman, RK Pati… - AIP Conference …, 2018 - pubs.aip.org
Cu2SnS3 thin films were electrodeposited on F: SnO2/Glass substrates at room temperature
by using aqueous solution. Copper and tin were first electrodeposited from single bath and …

The fabrication of Cu2BaSnS4 thin film solar cells utilizing a maskant layer

H Guo, C Ma, Z Chen, X Jia, Q Cang, N Yuan, J Ding - Solar Energy, 2019 - Elsevier
Abstract Cu 2 BaSnS 4 (CBTS) is a low cost, non-toxic material composed of abundant
elements with a large optical absorption coefficient. However, in CBTS solar cells, elemental …

Investigation on photovoltaic performance of Cu2SnS3 thin film solar cells fabricated by RF-sputtered In2S3 buffer layer

N Akcay, VF Gremenok, Y Ozen, KP Buskis… - Journal of Alloys and …, 2023 - Elsevier
A two-step process was used to prepare Cu 2 SnS 3 films in this study: first, precursor stacks
were deposited using a magnetron sputtering technique, and then the stacks were annealed …