A sub-2 db nf dual-band cmos lna for cdma/wcdma applications

H Song, H Kim, K Han, J Choi, C Park… - IEEE Microwave and …, 2008 - ieeexplore.ieee.org
This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …

A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier

LH Lu, HH Hsieh, YS Wang - IEEE Microwave and Wireless …, 2005 - ieeexplore.ieee.org
This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for
WLAN applications. By switching the input transconductance and the output capacitance …

8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

HS Jhon, I Song, J Jeon, H Jung, M Koo, BG Park… - Electronics Letters, 2008 - IET
A 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is
presented. The proposed LNA employs a positive feedback transmission-line-based LC …

A 90 nm CMOS 11 dBm IIP3 4 mW Dual-Band LNA for Cellular Handsets

GZ Fatin, ZD Koozehkanani… - IEEE Microwave and …, 2010 - ieeexplore.ieee.org
A dual-band cross-coupled common-gate low noise amplifier (LNA) utilizing post distortion
cancellation is introduced. A differential pair biased in weak inversion is used to cancel the …

A D-band variable gain low noise amplifier in a 28 nm CMOS process for 6G wireless communications

CJ Lee, H Nam, D Kim, SK Kim… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This brief presents a D-band variable gain low noise amplifier (VGLNA) in a 28 nm CMOS
process for 6G wireless communications. The VGLNA consists of four differential common …

A multi-band CMOS low noise amplifier for multi-standard wireless receivers

CW Ang, Y Zheng, CH Heng - 2007 IEEE International …, 2007 - ieeexplore.ieee.org
A novel multi-band low noise amplifier (LNA) that allows simultaneous reception of signals
from several wireless standards is designed and implemented using a 0.18-μm CMOS …

A 7-GHz 1.8-dB NF CMOS low-noise amplifier

R Fujimoto, K Kojima, S Otaka - IEEE journal of solid-state …, 2002 - ieeexplore.ieee.org
A 7-GHz low-noise amplifier (LNA) was designed and fabricated using 0.25-/spl mu/m
CMOS technology. A cascode configuration with a dual-gate MOSFET and shielded pads …

Dual band CMOS LNA design with current reuse topology

M Ben Amor, A Fakhfakh, H Mnif… - International journal of …, 2008 - Taylor & Francis
A dual band receiver architecture is introduced; it is able to make simultaneous operations at
two different frequency bands. This architecture uses a dual band low noise amplifier (LNA) …

A 0.5–11 GHz CMOS low noise amplifier using dual-channel shunt technique

QT Lai, JF Mao - IEEE microwave and wireless components …, 2010 - ieeexplore.ieee.org
A 0.5-11 GHz CMOS low noise amplifier (LNA) is proposed, with a new dual-channel shunt
technique implemented, where one channel uses inductive-series peaking to provide flat …

A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier

DR Lu, YC Hsu, JC Kao, JJ Kuo… - 2012 IEEE/MTT-S …, 2012 - ieeexplore.ieee.org
In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is
proposed. A four-stage cascode configuration is adopted to achieve the high gain and …