Hexagonal boron nitride is the only substrate that has so far allowed graphene devices
exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as …

Graphene devices on standard SiO 2 substrates are highly disordered, exhibiting
characteristics that are far inferior to the expected intrinsic properties of graphene 1, 2, 3, 4 …

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced
negative bend resistance and an anomalous Hall effect, which are a direct consequence of …

We present a fast method to fabricate high quality heterostructure devices by picking up
crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to …

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to
graphene device fabrication, but to date such graphene has exhibited lower mobility than …

Graphene has demonstrated great promise for future electronics technology as well as
fundamental physics applications because of its linear energy–momentum dispersion …

Graphene, a single layer of sp 2-bonded carbon atoms arranged in a honeycomb crystal
lattice, has been attracting much attention since the first isolation in 2004.[1] Based on its …

Producing and manipulating graphene on fab-compatible scale, while maintaining its
remarkable carrier mobility, is key to finalize its technological application. We show that a …

Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …

After graphene emerged as a material with the potential to supplant silicon in future
electronic devices because of its superior electronic properties, there has been a flurry of …