We have measured the temperature dependence of the photoluminescence of porous
silicon and have found that it disagrees with the expected behavior of crystalline or …

We have studied the temperature dependence of luminescence in porous silicon between
10 and 300 K. We find that above 60 K the luminescence has a temperature dependence …

We report on micro-Raman spectroscopy studies of porous silicon which show an
'amorphous silicon Raman line at 480 R cm-'from regions that emit visible …

Atomic force microscope and scanning tunneling microscope images of photoluminescent
anodically etched porous silicon are presented and the development of the porous structure …

Porous silicon that strongly emits in the visible was analyzed using Raman scattering. The
spectrum peaks near 508 cm~', has a width of-40 cm I~', and is very asymmetric. Using a …

We observe a quadratic rise of the absorption coefficient with excitation energy in
photoluminescence excitation spectra of porous silicon. Extrapolation to α= 0 yields an …

A systematic study of the dependence of photoluminescence from porous silicon (PS) on
oxidation extent and measurement temperature is given. Oxidation of PS samples at room …

Porous silicon samples consisting of either as-grown films, annealed films, or powders have
been studied with photoluminescence,(10–700 K) and photoluminescence excitation. In …

The photoluminescence properties of porous Si have been systematically investigated by
detailed measurements of the excitation and emission spectra. The strong visible light …

The luminescence in the visible range of porous silicon is analyzed in the hypothesis of
quantum confinement. We calculate the electronic and optical properties of silicon …