Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
T Das, S Youn, JE Seo, E Yang… - ACS Applied Materials & …, 2023 - ACS Publications
Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …
(2D) materials is a critical challenge in the process of integrating transition metal …
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
Atomically thin two-dimensional (2D) materials belonging to transition metal
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …
Doping-free complementary WSe2 circuit via van der Waals metal integration
Abstract Two-dimensional (2D) semiconductors have attracted considerable attention for the
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
Despite heightened interest in 2D transition-metal dichalcogenide (TMD) doping methods
for future layered semiconductor devices, most doping research is currently limited to …
for future layered semiconductor devices, most doping research is currently limited to …
Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts
Effective control of 2D transistors polarity is a critical challenge in the process for integrating
2D materials into semiconductor devices. Herein, a doping‐free approach for developing …
2D materials into semiconductor devices. Herein, a doping‐free approach for developing …
Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters
As demand for higher integration density and smaller devices grows, silicon‐based
complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …
complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate …
Light‐Rewritable Logic Devices Based on Van der Waals Heterostructures
Abstract 2D‐layered transition metal dichalcogenides (TMDCs) have attracted tremendous
interest as candidate material for next‐generation nanoelectronics because of their …
interest as candidate material for next‐generation nanoelectronics because of their …
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
L Zhang, Z Wang, J Zhang, B Chen… - Advanced Functional …, 2022 - Wiley Online Library
Semiconducting 2D transition metal dichalcogenides (2D TMDs) with tunable electronic
properties are a fundamental prerequisite for the development of next generation advanced …
properties are a fundamental prerequisite for the development of next generation advanced …
P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits
Z Cheng, X Jia, B Han, M Li, W Xu, Y Li… - … Applied Materials & …, 2024 - ACS Publications
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising
materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have …
materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have …
Antimony–Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel
YT Lin, CH Hsu, AS Chou, ZY Fong, CP Chuu… - Nano Letters, 2024 - ACS Publications
We develop a novel metal contact approach using an antimony (Sb)–platinum (Pt) bilayer to
mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy …
mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy …