[PDF][PDF] Design and Analysis of a New Loadless 4T SRAM Cell in Deep Submicron CMOS Technologies

AR Aswatha - academia.edu
The goal of this paper is to reduce the power and area of the Static Random Access Memory
(SRAM) array while maintaining the competitive performance. Here the various configuration …

[PDF][PDF] Performance Analysis of a Loadless 4T SRAM Cell for different CMOS Technologies

S Saxena, N Thakur, R Mehra - researchgate.net
The purpose of this paper is to reduce the area and power of the SRAM (Static Random
Access Memory) array while maintaining the excellent performance. The various …

[PDF][PDF] A 16nm CMOS Implementation of 8* 8 Array of SRAM utilizing Low Power 10T SRAM Cell With Expanded Static Noise Margins

KR KUMARI, D VEERAANJANEYULU… - Journal of …, 2023 - jespublication.mlsoft.in
As a result, it requires an ultralow power architecture. SRAM cells must be acquired via low
power methods. Initially, the 10T SRAM cell must be incorporated into all existing high …

Design and analysis of a new loadless 4T SRAM cell in deep submicron CMOS technologies

R Sandeep, NT Deshpande… - … on Emerging Trends in …, 2009 - ieeexplore.ieee.org
The goal of this paper is to reduce the power and area of the Static Random Access Memory
(SRAM) array while maintaining the competitive performance. Here the various configuration …

[PDF][PDF] A Comparative Analysis of SRAM Cells in 45nm, 65nm, 90nm Technology

P Narah, S Nath - Int. Journal of Engineering Research and …, 2018 - academia.edu
ABSTRACT Growth In The Semiconductor Industries Has Brought Greater Demand For Low
Power Consumption Design For Integrated Circuits (IC). Static Random Access Memory …

Impact of Design Parameters on 6T and 8T SRAM cells at 45nm technology.

J Sharma, S Akashe - Journal of Active & Passive Electronic …, 2015 - search.ebscohost.com
A SRAM cell is designed to meet the requirements for operation in nano ranges. SRAM is
highly used circuits in memory chips as it is used in caches, FIFO, register files etc. The …

A robust 11T SRAM cell with improved SNM in 22nm technology

U Singh - 2019 - krishikosh.egranth.ac.in
Abstract Static Random Access Memory (SRAM) is fundamental memory block used as
caches in computers, processors and battery operated devices. In this proposed work …

Design and Implementation of 1KB SRAM array in 45 nm Technology for Low-Power Applications

AS Kumar, KN Rao, A Sujith, T Dhanuja… - 2023 3rd International …, 2023 - ieeexplore.ieee.org
Static Random Access Memory (SRAM) is a critical component of digital circuits as it is used
for high-speed data storage and retrieval. The 6T SRAM cell is a popular type of SRAM cell …

[PDF][PDF] Design, Implementation and Analysis of 8T SRAM Cell in Memory Array'

B Kaleeswari, SK Mohideen - Int. J. Eng. Technol, 2018 - academia.edu
In modern VLSI designs, static random access memory plays a vital role because of its high
performance and low power consumption qualities. As technology is scale down, the …

[PDF][PDF] Comparative analysis of low power 8T SRAM

N Malik - 2020 - electronicnetjournal.com
There is requirement for a higher noise tolerant and low power static random access
memory (SRAM) in today's market. A stable 8 transistors SRAM (8T SRAM) cell is presented …