High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

Y Li, L Su, Y Lu, Q Luo, P Liang, H Shu, X Chen - InfoMat, 2023 - Wiley Online Library
A main challenge for the development of two‐dimensional devices based on atomically thin
transition‐metal dichalcogenides (TMDs) is the realization of metal–semiconductor junctions …

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

W Liao, S Zhao, F Li, C Wang, Y Ge, H Wang… - Nanoscale …, 2020 - pubs.rsc.org
Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have
attracted tremendous research interest for future electronics owing to their atomically thin …

Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors

J Kang, W Liu, D Sarkar, D Jena, K Banerjee - Physical Review X, 2014 - APS
Among various 2D materials, monolayer transition-metal dichalcogenide (mTMD)
semiconductors with intrinsic band gaps (1–2 eV) are considered promising candidates for …

3D behavior of Schottky barriers of 2D transition-metal dichalcogenides

Y Guo, D Liu, J Robertson - ACS applied materials & interfaces, 2015 - ACS Publications
The transition metal dichalcogenides (TMDs) are two-dimensional layered solids with van
der Waals bonding between layers. We calculate their Schottky barrier heights (SBHs) using …

[HTML][HTML] Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Y Du, L Yang, H Liu, PD Ye - APL Materials, 2014 - pubs.aip.org
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs)
have been widely isolated, synthesized, and characterized recently. Numerous 2D materials …

Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices

X Liu, K Xing, CS Tang, S Sun, P Chen, DC Qi… - Progress in Materials …, 2024 - Elsevier
The development of advanced electronic devices is contingent upon sustainable material
development and pioneering research breakthroughs. Traditional semiconductor-based …

Introduction: two-dimensional layered transition metal dichalcogenides

X Duan, H Zhang - Chemical Reviews, 2024 - ACS Publications
10619 https://doi. org/10.1021/acs. chemrev. 4c00586 Chem. Rev. 2024, 124, 10619−
10622 the latest developments, trends, and future directions in 2D-TMDs. From the outset …

Defect-assisted contact property enhancement in a molybdenum disulfide monolayer

SS Chee, JH Lee, K Lee, MH Ham - ACS applied materials & …, 2019 - ACS Publications
Contact engineering for two-dimensional (2D) transition metal dichalcogenides (TMDCs) is
crucial for realizing high-performance 2D TMDC devices, and most studies on contact …

Two-dimensional metallic alloy contacts with composition-tunable work functions

X Li, H Long, J Zhong, F Ding, W Li, Z Zhang… - Nature …, 2023 - nature.com
Heterostructures made using two-dimensional semiconducting transition metal
dichalcogenides could be used to build next-generation electronic devices. However, their …