Amorphous Si layers have been melted by pulsed electron irradiation. Implanted As has
been used as a marker for determining melt duration. Systematic differences between As …

The role of MeV implantation in producing thick amorphous Si layers has been central in
elucidating several of its properties. The recent use of MeV Si beams to produce very pure …

Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …

A double-peak structure is observed in the Cu concentration profile after low-energy pulsed-
laser irradiation of Cu-implanted Si. From the Cu surface segregation a primary melt depth is …

In this review we have examined the crystallization behavior of a-Si over the
temperaturerange from 500° C to∼ 1380° C. We have shown that SPE is a thermally …

We have investigated microstructural changes in self‐implanted and arsenic‐ion‐implanted
amorphous silicon layers as a function of energy density after pulsed ruby laser irradiation …

The nucleation kinetics of the amorphous‐to‐crystal transition of Si films under 1.5 MeV Xe+
irradiation have been investigated by means of in situ transmission electron microscopy in …

The technique of cross-sectional electron microscopy has been used to investigate the
mechanism of electron-beam-induced solid-phase epitaxy of amorphous silicon at room …

Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …

Thick amorphous Si layers have been prepared by MeV self-ion-implantation and the
thermodynamic and structural properties examined by calorimetry, Raman-spectroscopy …