80 GHz low noise amplifiers in 65nm CMOS SOI
B Martineau, A Cathelin, F Danneville… - ESSCIRC 2007-33rd …, 2007 - ieeexplore.ieee.org
A 1 stage and 3 stages 80 GHz low noise amplifiers (LNA) are presented in this paper. Both
mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier …
mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier …
A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS
L Aspemyr, H Jacobsson, M Bao… - Digest of Papers …, 2006 - ieeexplore.ieee.org
The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz
realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA …
realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA …
24 GHz low-noise amplifier in 0.18 µm CMOS technology
KW Yu, YL Lu, D Huang, DC Chang, V Liang… - Electronics letters, 2003 - IET
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 µm CMOS
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 …
30 GHz CMOS low noise amplifier
E Adabi, B Heydari, M Bohsali… - 2007 IEEE Radio …, 2007 - ieeexplore.ieee.org
30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process.
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 …
6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
18-26 GHz low-noise amplifiers using 130-and 90-nm bulk CMOS technologies
Two 18-26 GHz CMOS low-noise amplifiers using 130-and 90-nm bulk CMOS technologies
are described in this paper. The thin-film microstrip (TFMS) LNA using a 130-nm CMOS …
are described in this paper. The thin-film microstrip (TFMS) LNA using a 130-nm CMOS …
A 60 GHz broadband low-noise amplifier with variable-gain control in 65 nm CMOS
YK Hsieh, JL Kuo, H Wang… - IEEE microwave and …, 2011 - ieeexplore.ieee.org
A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented.
Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA …
Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA …
A 2.9-dB noise figure, Q-band millimeter-wave CMOS SOI LNA
M Parlak, JF Buckwalter - 2011 IEEE Custom Integrated Circuits …, 2011 - ieeexplore.ieee.org
This paper discusses a two-stage low noise amplifier (LNA) implemented in a 45nm CMOS
SOI process that operates between 43 and 53 GHz. The LNA stages are based on a …
SOI process that operates between 43 and 53 GHz. The LNA stages are based on a …
Design of a 6GHz high-gain low noise amplifier
X Tang, F Huang, D Zhao - 2012 international conference on …, 2012 - ieeexplore.ieee.org
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …
conventional inductive degeneration is applied to reduce the noise figure. The amplifying …