Nickel-based Schottky contacts to n-6H-SiC, subjected to various heat treatments, have
been studied by the capacitancevoltage technique, X-ray diffractometry and AES sputter …

Abstract 4H–SiC Schottky diodes with nickel silicide contacts were formed by consecutive
deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by …

In this work the electrical properties of Ni and Ni2Si contacts on n-type 4H-SiC were
correlated to the strong structural changes at the contact/SiC interface upon annealing. We …

The structural and electrical characterisation of nickel contacts on n-type silicon carbide was
performed to improve the ohmic behaviour at high temperatures. The formation of nickel …

Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …

Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the
electrical properties with microstructural change. The ohmic behavior was observed at …

In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …

The evolution of the structural and electrical properties of Ni/Ti/SiC Schottky contacts upon
thermal treatments was investigated. The samples were prepared by sequentially …