Etching of scandium-doped aluminum nitride using inductively coupled plasma dry etch and tetramethyl ammonium hydroxide
Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …
Vertical etching of scandium aluminum nitride thin films using TMAH solution
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …
Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn (acac) 2 reactions and enhancement by H2 and Ar …
NR Johnson, H Sun, K Sharma… - Journal of Vacuum …, 2016 - pubs.aip.org
Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …
[PDF][PDF] Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution. Nanomaterials 2023, 13, 274
A Shifat, I Stricklin, RK Chityala, A Aryal, G Esteves… - 2023 - academia.edu
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made ScxAl1− xN a promising material in …
some of the outstanding properties that have made ScxAl1− xN a promising material in …
Highly selective dry etching of III nitrides using an inductively coupled plasma
The selective etch characteristics of GaN, Al x Ga 1− x N, and In x Ga 1− x N have been
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …
examined in an inductively coupled plasma reactor using Cl 2/Ar/O 2 as the etchant gas …
Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma
Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …
Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF6 plasma and Al (CH3) 3
H Wang, A Hossain, D Catherall… - Journal of Vacuum …, 2023 - pubs.aip.org
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using
sequential exposures of SF 6 plasma and trimethylaluminum [Al (CH 3) 3]. ALE was …
sequential exposures of SF 6 plasma and trimethylaluminum [Al (CH 3) 3]. ALE was …
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
Although selective dry etches exist for GaN, it is difficult to selectively etch AlN in
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
heterostructures with other conventional III-N epitaxial materials. The reduction in etch rate …
[HTML][HTML] High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching
We report on the anisotropic wet etching of sputtered AlN and Sc 0.2 Al 0.8 N thin films. With
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
Etch Mechanism of AlN Thin Film in Cl2/Ar Inductively Coupled Plasma
JC Woo, DP Kim, GH Kim - Transactions on Electrical and Electronic …, 2022 - Springer
The etching characteristics of aluminum nitride (AlN) were investigated with the etch rate of
AlN thin film and the selectivity of AlN to SiO2 in an inductively coupled Cl2/Ar plasma. The …
AlN thin film and the selectivity of AlN to SiO2 in an inductively coupled Cl2/Ar plasma. The …