Thick amorphous Si layers have been prepared by MeV self-ion-implantation and the
thermodynamic and structural properties examined by calorimetry, Raman-spectroscopy …

Differential scanning calorimetry of amorphous silicon (a-Si) prepared by ion implantation
shows a one-time low-temperature heat release, equal to one-third of the heat of …

Annealing and production of metastable defects in disordered solids is explained
quantitatively with a model in which defect relaxation is a local phenomenon. The stretched …

Transient structural relaxation of ion-implanted and vacuum-evaporated amorphous silicon
has been studied over a wide range of times and temperatures using Raman spectroscopy …

The first experimental evidence for a thermal-equilibrium defect density in undoped
hydrogenated amorphous silicon, a metastable material, is presented. The defect density is …

Generation of light‐induced metastable defects in amorphous Si: H (a‐Si: H) is shown to
follow the same stretched exponential (SE) that describes relaxation of thermally induced …

The bulk chemical processes responsible for defect equilibria in hydrogenated amorphous
silicon (a-Si: H) are examined. Thermodynamic analyses of the corresponding chemical …

The structure of pure, nonhydrogenated amorphous silicon (a‐Si) was modified by means of
ion implantation, furnace annealing, and pulsed laser annealing. Defects in a‐Si were …

It is shown that four fundamental reactions involving floating bonds, dangling bonds, and H
govern defect dynamics in a-Si: H under equilibrium and various nonequilibrium conditions …

The annealing of light-induced metastable defects, as measured by electron-spin
resonance, exhibits a time dependence that is consistent with the kinetics of other …